REV. AInformation furnished by Analog Devices is believed to be accurate andreliable. However, no responsibility is assumed by Analog Devices for itsu
ADP1148, ADP1148-3.3, ADP1148-5–10–REV. ADesign ExampleAs a design example, assume VIN = 12 V (nominal), VOUT = 5 V,IMAX = 2 A, and f = 200 kHz, RSEN
ADP1148, ADP1148-3.3, ADP1148-5–11–REV. ABoard LayoutWhen laying out the printed circuit board, the following checklist should be used to ensure prope
ADP1148, ADP1148-3.3, ADP1148-5–12–REV. AP-DRIVENCVINCTINT VCCITHSENSE(–)N-DRIVENCPOWER GNDSIGNAL GNDSHUTDOWNVFBSENSE(+)ADP1148-3.3CC3300pFRC1kVIRF740
ADP1148, ADP1148-3.3, ADP1148-5–13–REV. AP-DRIVENCVINCTINT VCCITHSENSE(–)N-DRIVENCPOWER GNDSIGNAL GNDSHUTDOWNVFBSENSE(+)ADP1148CC3300pFRC1kVIRF7403D11
ADP1148, ADP1148-3.3, ADP1148-5–14–REV. AOUTLINE DIMENSIONSDimensions shown in inches and (mm).14-Lead Plastic DIP(N-14)141780.795 (20.19)0.725 (18.42
–16–C2219a–2–12/97PRINTED IN U.S.A.
–2–REV. AADP1148, ADP1148-3.3, ADP1148-5–SPECIFICATIONSELECTRICAL CHARACTERISTICSParameter Symbol Conditions2Min Typ Max UnitsFEEDBACK VOLTAGEADP1148
–3–REV. AADP1148, ADP1148-3.3, ADP1148-5ELECTRICAL CHARACTERISTICSParameter Symbol Conditions2Min Typ Max UnitsFEEDBACK VOLTAGEADP1148 Only V10VIN = 9
ADP1148, ADP1148-3.3, ADP1148-5–4–REV. ACAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readilyaccumula
Typical Performance Characteristics–ADP1148, ADP1148-3.3, ADP1148-5–5–REV. AMAXIMUM OUTPUT CURRENT – A200005123415010050RSENSE – mVFigure 3. Selecting
(VIN–VOUT) – V12NORMALIZED FREQUENCY12468101.81.60.00.80.60.40.21.41.01.208C258C708CFigure 12. Operating Frequency vs.(VIN–VOUT)TEMPERATURE – 8C155120
ADP1148, ADP1148-3.3, ADP1148-5–7–REV. AAPPLICATIONSThe ADP1148 uses a current-mode, constant off-time structureto switch a pair of external complemen
ADP1148, ADP1148-3.3, ADP1148-5–8–REV. AAs the operating frequency is increased, the gate charge losseswill cause reduced efficiency (see Efficiency s
ADP1148, ADP1148-3.3, ADP1148-5–9–REV. AAn additional 0.1 µF – 1 µF ceramic bypass capacitor is advisedon VIN Pin 3 parallel with CIN. The selection o
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